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JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
Volume 46, Issue 4B, Pages 2516-2518Publisher
INST PURE APPLIED PHYSICS
DOI: 10.1143/JJAP.46.2516
Keywords
Zn1-xCdxO; remote-plasma-enhanced MOCVD; RF power; band gap; refractive index
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Zn1-xCdxO films were grown on a-plane (11 (2) over bar0) sapphires by remote-plasma-enhanced metalorganic chemical vapor deposition (RPE-MOCVD). The growth temperature, the group-II flow ratio R, and RF power are important parameters for the growth of Zn1-xCdxO films by RPE-MOCVD. R is defined as the molar function of [DMCd/(DEZn + DMCd)]. We discuss typical growth features associated with RPE-MOCVD and the refractive indices of wurtzite-type films. The band gap energy of Zn1-xCdxO grown at 350 degrees C can be controlled from 3.3 down to 1.8 eV. The refractive index is measured by ellipsometry at 1.96 eV and is found to vary from 2.07 to 2.78.
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