Journal
IEEE JOURNAL OF SOLID-STATE CIRCUITS
Volume 42, Issue 4, Pages 839-845Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSSC.2007.892207
Keywords
1T1CBJ; CBRAM; program; universal memory
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A 2-Mbit CBRAM (Conductive Bridging Random Access Memory) core has been developed utilizing a 90 nm, VDD = 1.5 V process technology. The presented design uses an 8F(2) (0.0648 mu m(2)) 1T1CBJ (1-Transistor/1-Conductive Bridging junction) cell and introduces a fast feedback regulated CBJ read voltage and a novel program charge control using dummy cell bleeder devices. Random read/write cycle times <= 50 ns are demonstrated.
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