A nonvolatile 2-Mbit CBRAM memory core featuring advanced read and program control

A 2-Mbit CBRAM (Conductive Bridging Random Access Memory) core has been developed utilizing a 90 nm, VDD = 1.5 V process technology. The presented design uses an 8F(2) (0.0648 mu m(2)) 1T1CBJ (1-Transistor/1-Conductive Bridging junction) cell and introduces a fast feedback regulated CBJ read voltage and a novel program charge control using dummy cell bleeder devices. Random read/write cycle times <= 50 ns are demonstrated.