Journal
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
Volume 46, Issue 4B, Pages 2596-2598Publisher
INST PURE APPLIED PHYSICS
DOI: 10.1143/JJAP.46.2596
Keywords
silicon; silicon-on-insulator (SOI) electrons and holes; ambipolar; Hall-bar; magnetotransport; mobility; quantum Hall effect
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We present the basic low-temperature characteristics of SiO2/Si/SiO2) Hall-bar devices, where each Hall-bar arm is split into p- and n-type Ohmic contacts made by selective area ion-implantation doping of boron and phosphorus, respectively. Magnetotransport measurements of a 22-nm-thick Si(001) quantum well show Shubnikov-de Haas oscillations of two-dimensional holes in addition to the electrons generated at both sides of the quantum well. We discuss applications for extracting the physical characteristics of this technologically vital material system.
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