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JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
Volume 46, Issue 4B, Pages 2585-2591Publisher
INST PURE APPLIED PHYSICS
DOI: 10.1143/JJAP.46.2585
Keywords
spintronics; semiconductor heterostructure; two-dimensional electron gas; GaAs; spin polarization; electron transport; electron mobility
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The effect of electron-electron scattering on electron transport in spin-polarized, two-dimensional electron gas is studied in semiconductor heterostructures. We calculate electron mobilities for spin-up and -down electrons separately in a GaAs heterostructure at temperatures below 10 K and an electron density of 2 x 10(11) cm(-2). We find that the electron-electron scattering has a significant influence on the transport in the spin-polarized system. Our numerical calculations show that the contribution from electron-electron scattering, compared with those from impurity scattering and phonon scattering, may be detectable in the temperature dependence of electron mobilities in a high-quality heterostructure when the spin relaxation rate is low.
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