Spin drag effect in temperature dependence of spin-polarized electron mobilities

The effect of electron-electron scattering on electron transport in spin-polarized, two-dimensional electron gas is studied in semiconductor heterostructures. We calculate electron mobilities for spin-up and -down electrons separately in a GaAs heterostructure at temperatures below 10 K and an electron density of 2 x 10(11) cm(-2). We find that the electron-electron scattering has a significant influence on the transport in the spin-polarized system. Our numerical calculations show that the contribution from electron-electron scattering, compared with those from impurity scattering and phonon scattering, may be detectable in the temperature dependence of electron mobilities in a high-quality heterostructure when the spin relaxation rate is low.