Photoluminescence study of semipolar {1011} InGaN/GaN multiple quantum wells grown by selective area epitaxy

Semipolar InGaN/GaN multiple quantum wells (MQWs) were fabricated on the {10 (1) over bar1} facets of GaN pyramidal structures by selective area epitaxy. Optical properties of the MQWs were investigated by photoluminescence (PL) in comparison with (0001) MQWs. Compared with (0001) MQWs, the internal electric field in the {10 (1) over bar1} MQWs was remarkably reduced, the PL peak redshifted monotonically with the increasing temperature, and the internal quantum efficiency was estimated to be improved by a factor of 3. These results suggest that the {10 (1) over bar1} planes are promising for improving the performance of III-nitride light emitters owing to their surface stability and suppression of polarization effects.