Journal
APPLIED PHYSICS LETTERS
Volume 90, Issue 14, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.2719158
Keywords
-
Categories
Ask authors/readers for more resources
A comprehensive model for the electronic transport in polycrystalline ZnO:B thin films grown by low pressure chemical vapor deposition is presented. The optical mobilities and carrier concentration calculated from reflectance spectra using the Drude model were compared with the data obtained by Hall measurements. By analyzing the results for samples with large variation of grain size and doping level, the respective influences on the transport of potential barriers at grain boundaries and intragrain scattering could be separated unambiguously. A continuous transition from grain boundary scattering to intragrain scattering is observed for doping level increasing from 3x10(19) to 2x10(20) cm(-3). (c) 2007 American Institute of Physics.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available