Low-power switching in magnetoresistive random access memory bits using enhanced permeability dielectric films

We reduced the switching field (H-sw) in arrays of single-layer magnetoresistive random access memory elements using enhanced permeability dielectric (EPD) films. This reduction is due to an increased magnetic flux density produced at the bit by increasing the permeability mu of the surrounding dielectric. The authors produced EPD films by embedding superparamagnetic nanoparticles of various sizes in oxides of Al, Mg, or Si. For bits surrounded by EPD, H-sw decreased linearly as mu increased. Using this approach, we reduced H-sw by approximate to 40% for mu=3.5, without changing the energy barrier to magnetization reversal. (c) 2007 American Institute of Physics.