Journal
APPLIED PHYSICS LETTERS
Volume 90, Issue 14, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.2719164
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The authors report topography-free material contrast imaging on a nanofabricated boron-doped silicon sample measured with a near-field scanning microwave microscope over a broad frequency range. The boron doping was performed using the focus ion beam technique on a silicon wafer with nominal resistivity of 61 Omega cm. A topography-free doped region varies in sheet resistance from 1000 Omega/square to about 400 k Omega/square within a lateral distance of 4 mu m. The qualitative spatial resolution in sheet resistance imaging contrast is no worse than 100 nm as estimated from the frequency shift signal. (c) 2007 American Institute of Physics.
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