Reversal of forward voltage drift in 4H-SiC p-i-n diodes via low temperature annealing

Recent reports have shown that Shockley stacking fault (SSF) growth in 4H-SiC may be reversed via low temperature (210-600 degrees C) annealing. It is not clear if the associated drift in the forward voltage drop (V-f) is also reversed. Here we show that annealing of SSFs causes the complete and repeatable recovery of V-f. Furthermore, by looking at the time-dependent recovery of V-f during both the current stressing and thermal annealing of a single diode, we ascertain that the mechanisms for these two processes are different. (c) 2007 American Institute of Physics.