Evidence for an oxygen diffusion model for the electric pulse induced resistance change effect in transition-metal oxides

Electric-pulse induced resistance hysteresis switching loops for Pr0.7Ca0.3MnO3 perovskite oxide films were found to exhibit an additional sharp shuttle tail peak around the negative pulse maximum for films deposited in an oxygen-deficient ambient. The resistance relaxation in time of this shuttle tail peak as well as resistance relaxation in the transition regions of the resistance hysteresis loop show evidence of oxygen diffusion under electric pulsing, and support a proposed oxygen diffusion model with oxygen vacancy pileup at the metal electrode interface region as the active process for the nonvolatile resistance switching effect in transition-metal oxides.