Journal
APPLIED PHYSICS LETTERS
Volume 90, Issue 15, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.2722225
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ZnO(0001)/Si(111) interface is engineered by using a three-step technique, involving low-temperature Mg deposition, oxidation, and MgO homoepitaxy. The double heterostructure of MgO(111)/Mg(0001)/Si(111) formed at -10 degrees C prevents the Si surface from oxidation and serves as an excellent template for single-domain ZnO epitaxy, which is confirmed with in situ reflection high-energy electron diffraction observation and ex situ characterization by transmission electron microscopy, x-ray diffraction, and photoluminescence. The low-temperature interface engineering method can also be applied to control other reactive metal/Si interfaces and obtain high-quality oxide templates accordingly. (c) 2007 American Institute of Physics.
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