Journal
APPLIED PHYSICS LETTERS
Volume 90, Issue 15, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.2721132
Keywords
-
Categories
Ask authors/readers for more resources
The authors have used positron annihilation spectroscopy and photoluminescence measurements to study the influence of silicon doping on vacancy formation in AlGaN:Si structures. The results show a correlation between the Doppler broadening measurements and the intensity from 510 nm photoluminescence transition. The reduction in the W parameter when the [Si]/[Al+Ga] fraction in the gas phase is above 3x10(-4) indicates that the positrons annihilate in an environment where less Ga 3d electrons are present, i.e., they are trapped in group-III vacancies. The observation of vacancies at these silicon concentrations coincides with the onset of the photoluminescence transition at 510 nm. (c) 2007 American Institute of Physics.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available