Atomic layer deposited Al2O3 for gate dielectric and passivation layer of single-walled carbon nanotube transistors

High performance single-walled carbon nanotube field effect transistors (SWCNT-FETs) fabricated with thin atomic layer deposited (ALD) Al2O3 as gate dielectrics and passivation layer are demonstrated. A 1.5 mu m gate-length SWCNT-FETs with 15 nm thick Al2O3 insulator shows a gate leakage current below 10(-11) A at -2.5 V<+7 V, a subthreshold swing of S similar to 105 mV/decade, and a maximum on current of -12 mu A at a reverse gate bias of -1 V. Lack of hysteresis in IV characteristics and low low frequency noise indicate high quality oxide-nanotube interface achieved utilizing ALD Al2O3 as gate dielectrics and passivation layer. (C) 2007 American Institute of Physics.