Growth of SiC nanowires/nanorods using a Fe-Si solution method

A new solution technique to grow SiC nanowires/nanorods was developed by simply heating Fe - Si melt on a graphite plate in argon atmosphere to 1600 degrees C for 3 and 6 h. SiC nanowires/nanorods with diameters of 100 nm and lengths of several tens of micrometres were grown on the surface of the melt. The prototype of the nanowires/ nanorods is 3C-SiC (beta-SiC), and the growth direction is [111] for 3C-SiC. Taking into consideration the action of Fe in Fe - Si melt and the possible participation of oxygen, the growth mechanism of the SiC nanowires is proposed. It is believed that the formation of SiC nanowires is a combination of the solid - liquid - solid (SLS) reaction for nucleation and the vapour - liquid - solid (VLS) process for nanowire growth. In the SLS reaction, graphite carbon ( solid) dissolved in the Fe - Si melt ( liquid), and then reacted with the silicon in the melt to form SiC nuclei ( solid). In the VLS reaction, SiO and CO ( vapours) dissolved in the melt droplets ( liquid) attached to the tip of the growing SiC nanowires ( solid), and reacted to make them grow further.