Journal
THIN SOLID FILMS
Volume 515, Issue 12, Pages 4960-4965Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2006.10.068
Keywords
air-gap; Cu interconnect; low-k; plasma treatment
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A novel sacrificial chemical vapor deposition film etch-back process for Cu air-gap interconnects was developed. The etched-back Cu surfaces were analyzed by X-ray photoelectron spectroscopy. The electrical characteristics and the stress induced voiding reliability were evaluated. The CF4 etch-back process was found not to degrade interconnect reliability. A four-level dual damascene Cu interconnect structure was successfully fabricated, and its effective dielectric constant was 2.8, 32% lower than that of a conventionally fabricated one. In situ N-2 or Ar plasma treatments after etch-back were investigated to reduce the Cu degradation. (c) 2006 Elsevier B.V. All rights reserved.
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