AlN/AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistor on 4 in. silicon substrate for high breakdown characteristics

AlN/AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) grown on 4 in. silicon substrate have been demonstrated. The heterostructure exhibited high sheet carrier density with small surface roughness. AlN/AlGaN/GaN MIS-HEMT exhibited maximum drain current density (I-DS max) of 361 mA/mm and maximum extrinsic transconductance (g(m max)) of 152 mS/mm. Due to the increase of sheet carrier density, the 2DEG channel shifts towards the AlGaN/GaN interface resulting in positive shift of the threshold voltage (-2.6 to -1.8 V). Two orders of magnitude low gate leakage current and reduced drain current collapse with high breakdown voltage of 230 V have been observed on AlN/AlGaN/GaN MIS-HEMTs. (c) 2007 American Institute of Physics.