Low voltage complementary thin-film transistor inverters with pentacene-ZnO hybrid channels on AlOx dielectric

The authors report on the fabrication of complementary thin-film transistor (CTFT) inverters with pentacene (p type) and ZnO (n type) hybrid channels on rf-deposited AlOx dielectrics. All deposition processes were carried out on glass substrates at low temperatures (< 100 degrees C). Since our p-channel TFT showed somewhat equivalent field mobility of 0.11 cm(2)/V s compared to that of the n-channel device (0.75 cm(2)/V s), the hybrid CTFT inverters were designed with identical dimensions for both channels. The CTFT device demonstrated an excellent voltage gain of similar to 21 with a low static power dissipation of similar to 1.5 nW at a low supply voltage of 7 V. (c) 2007 American Institute of Physics.