Journal
THIN SOLID FILMS
Volume 515, Issue 12, Pages 4918-4922Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2006.10.100
Keywords
plasma process and deposition; etching; NLD plasma; deep etching; silicon; quartz; MEMS
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A disadvantage of ICP type plasma etching method compared with CCP one is low selectivity to photo resist. So a novel etching method was developed to obtain high selectivity to photo resist by incorporating a sputtering method, in which a target was placed on the opposite side of the substrate. Satisfactory results were obtained for a continuous gas feeding treatment and also for a gas modulating treatment. (c) 2006 Elsevier B.V All rights reserved.
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