High-mobility double-gate organic single-crystal transistors with organic crystal gate insulators

High-mobility organic transistors are fabricated on both surfaces of approximately 1-mu m-thick rubrene crystals, molecularly flat over an area of 10x10 mu m(2). A thin platelet of 9,10-diphenylanthracene single crystal and surface-passivated SiO2 are used for the gate insulators. Because of the minimized densities of hole-trapping levels at the interfaces and in the rubrene crystal, the field-induced carriers do not necessarily reside near the interface but are distributed in the bulk of the semiconductor by adjusting the two gate voltages. Making use of the highly mobile carriers in the inner crystal, the mobility is maximized to similar to 43 cm(2)/V s. (C) 2007 American Institute of Physics.