Journal
MATERIALS LETTERS
Volume 61, Issue 13, Pages 2833-2836Publisher
ELSEVIER
DOI: 10.1016/j.matlet.2006.11.038
Keywords
crystal growth; epitaxial growth; GaN; nanowires; Ti
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GaN nanowires were synthesized by ammoniating Ga2O3 films on Ti layers deposited on Si (111) substrates at 950 degrees C. The products were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), Fourier transformed infrared spectroscopy (FTIR) and high-resolution transmission electron microscopy (HRTEM). The XRD, FTIR and HRTEM studies showed that these nanowires were hexagonal GaN single crystals. SEM observation demonstrated that these GaN nanorods with diameters ranging from 50 nm to 100 nm and lengths up to several micrometers intervene with each other on the substrate. (C) 2006 Elsevier B.V. All rights reserved.
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