Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 54, Issue 5, Pages 945-954Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2007.894622
Keywords
anomalous Hall effect; ferromagnetic semiconductors; magnetic circular dichroism; magnetic tunneling junctions; magnetization manipulation; p-d Zener model; II-VI compounds; III-V compounds; (Ga,Mn)As; (In,Mn)As
Ask authors/readers for more resources
Ferromagnetism in transition-metal-doped III-V and H-VI compound semiconductors and their heterostructures allow exploration of unprecedented possibilities, in which spin degrees of freedom and more common charge degrees of freedom are combined. These include quantum heterostructures that incorporate ferromagnetism, electric field as well as light control of ferromagnetism, and magnetization reversal by electrical means. Possibilities of achieving high ferromagnetic-transition temperature are also discussed.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available
Share Paper
