Journal
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
Volume 1, Issue 3, Pages 113-115Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssr.200701027
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Epitaxial TiC/SiC multilayers were grown by magnetron sputtering at a substrate temperature of 550 degrees C, where SiC is normally amorphous. The epitaxial TiC template induced growth of cubic SiC up to a thickness of similar to 2 nm. Thicker SiC layers result in a direct transition to growth of the metastable amorphous SiC followed by renucleation of nanocrystalline TiC layers. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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