Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 54, Issue 5, Pages 907-920Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2007.894376
Keywords
magnetoelectronics; Rashba fields; spin coherence; spin electronics; spin Hall effect; spin relaxation times; spin transistor; spin transport; spintronics; spin valve
Ask authors/readers for more resources
Investigations of the dynamics of spin-polarized electronic current through and near materials with spin-dependent electronic structures have created a rich new field dubbed spintronics. The implications of spintronics research extend deep into the realm of fundamental material properties, yet spintronics applications have also revolutionized the magnetic-storage industry by providing efficient room-temperature magnetic sensors. Control of nonequilibrium spin-polarized populations of electrons through and near magnets has led to the dominance of linear (resistive) spintronic devices for magnetic readout in commercial magnetic storage. Rapid progress in understanding the fundamental physics of nonlinear spin-polarized electronic transport in metals and semiconductors suggests new applications for spintronic devices in fast nonvolatile memory as well as logic devices, with or without magnetic materials or magnetic fields. Ongoing study of the interaction between such spintronic elements and optical fields, particularly in semiconductors, promises the future development of optical spintronic devices.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available