Fabrication of nanogapped single-electron transistors for transport studies of individual single-molecule magnets

Three-terminal single-electron transistor devices utilizing Al/Al2O3 gate electrodes were developed for the study of electron transport through individual single-molecule magnets (SMMs). The devices were patterned via multiple layers of optical and electron beam lithography. Electromigration induced breaking of the nanowires reliably produces 1-3 nm gaps between which the SMM can be situated. Conductance through a single Mn-12 (3-thiophenecarboxylate) displays the Coulomb blockade effect with several excitations within +/- 40 meV.