Journal
IEEE ELECTRON DEVICE LETTERS
Volume 28, Issue 5, Pages 389-391Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2007.895449
Keywords
active-matrix organic light-emitting diode (AMOLED) display; flexible; metal foil; poly-Si; thin-film transistors (TFTs)
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Full-color active-matrix organic light-emitting diode panels, driven by poly-Si thin-film transistors (poly-Si TFTs), were successfully fabricated on thin metal foil substrates. The p-channel poly-Si TFTs on metal foil showed a field-effect mobility of 82.9 cm(2)/V center dot s, subthreshold slope of 0.34 V/dec, threshold voltage of -1.67 V, and OFF-current of 6.6 x 10(-14) A/mu m. The 5.6-in panel had 160 x RGB x 350 pixels, each of which had a pixel circuit of two TFTs and one capacitor.
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