Journal
JOURNAL OF APPLIED PHYSICS
Volume 101, Issue 9, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.2712175
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We report on the observation of room temperature ferromagnetism in Cr-doped In2O3 bulk samples and spin-coated thin films. The samples showed a clear ferromagnetism above 300 K with magnetic moments of 0.008 and 0.22 mu(B)/Cr at 300 K for the bulk and thin film, respectively, only after high vacuum (HV) annealing at 600 degrees C. The vacuum annealed Cr-doped In2O3 thin films showed a typical semiconducting behavior with a room temperature resistivity of 0.73 Omega cm, while bulk samples were more conducting (23 m Omega cm). We present systematic investigations on the influence of HV annealing on the carrier concentrations, resistivity, and magnetic properties of the samples. (c) 2007 American Institute of Physics.
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