Improved electroluminescence on nonpolar m-plane InGaN/GaN quantum wells LEDs

Improved mompolar m-plane (1 (1) over bar 00) light emitting diodes (LEDs) with a thick InGaN multi-quantum-well (MQW) structure have been fabrictated on low extended defect bulk m-plane GaN sucstrates using metal organic chemical vapor deposition (MOCVD). The peak wavelength of the electro-luminescence emission from the packaged LEDs was 402 nm, which is in the blue-violet region. The output power and EQE were 28 nW and 45.4%, respectively, at a pulsed driving current of 20 mA. With increasing current, the output power increased linearly, and fairly flat EQE was observed with increasing drive current. At 200 mA, the power and EQE were 250 mW and 41%, respectively. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.