Journal
IEEE ELECTRON DEVICE LETTERS
Volume 28, Issue 5, Pages 422-424Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2007.894648
Keywords
breakdown voltage (BV); charge; double-sided trench (DT); electric field; modulate
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A novel silicon-on-insulator (SOI) high-voltage device structure with double-sided trenches on the buried oxide layer (DT SOI) is proposed and its breakdown characteristics are investigated theoretically and, experimentally in this letter. Theoretically, the charges implemented in the DTs, whose density changes with the drain voltage, increase the electric field in the buried layer and modulate the electric field in the drift region, which results in the enhancement of the breakdown voltage (BV). Experimentally, the BV of 730 V is obtained for the first time in SOI LDMOS with DT on 20-mu m SOI layer and 1-mu m buried oxide layer.
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