Visible light emission by a reverse-biased integrated silicon diode

In this paper, we discuss the emission of visible light by a monolithically integrated silicon diode under reverse bias. The emission of light is achieved using a special defect-engineered buried layer. The light is emitted as punctiform sources by the defects located at the p-n junction of the reverse-biased diode. The influence of the defects on the electrical behavior is manifested as a current-dependent electroluminescence.