Journal
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS
Volume 17, Issue 5, Pages 352-354Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LMWC.2007.895706
Keywords
diode; phased array communication systems; PIN diode; SiGeBiCMOS system-on-chip (SOC); transmit/receive; (T/R) module
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A novel octagonal SiGe p-type intrinsic n-type (PIN) diode single pole single throw (SPST) switch is first implemented in a standard 0.18-mu m SiGe BiCMOS technology. Distinctive radio frequency performance of monolithic silicon PIN diode switch is achieved for broadband applications with improvement of its geometry. Over the 2-16 GHz frequency band, the PIN diode SPST switch exhibits an insertion loss of less than I dB and isolation between 42 dB to 19 dB. An accurate small signal model of series PIN diode is also presented.
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