Journal
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
Volume 258, Issue 1, Pages 163-166Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.nimb.2006.12.177
Keywords
highly charged ion (HCI); potential sputtering; Si surface; time of flight secondary ion mass spectrometry (TOF SIMS); scanning tunneling microscopy (STM)
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We have observed radiation effect in collision of slow highly charged ions with the following target materials; a SiO2 thin film, a Si(111)-(7 x 7) surface and a hydrogen terminated Si(111)-(1 x 1) surface. Secondary ion mass spectrometry and scanning tunneling microscopy revealed some features due to potential sputtering; (a) strong dependence of secondary particle emission on the surface condition, (b) high yield of positive ion emission including cluster fragments and (c) creation of nanometer sized surface structure. The mechanism for the potential sputtering is briefly discussed, based on the Coulomb explosion model. (c) 2007 Elsevier B.V. All rights reserved.
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