4.6 Article

Enhanced electron-hole interaction and optical absorption in a silicon nanowire

Journal

PHYSICAL REVIEW B
Volume 75, Issue 20, Pages -

Publisher

AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.75.201304

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We present a first-principles study of the correlated electron-hole states in a silicon nanowire of a diameter of 1.2 nm and their influence on the optical absorption spectrum. The quasiparticle states are calculated employing a many-body Green's function approach within the GW approximation to the electron self-energy, and the effects of the electron-hole interaction to optical excitations are evaluated by solving the Bethe-Salpeter equation. The enhanced Coulomb interaction in this confined geometry results in an unusually large binding energy (1-1.5 eV) for the excitons, which dominate the optical absorption spectrum.

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