Journal
APPLIED PHYSICS LETTERS
Volume 90, Issue 19, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.2738367
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Thin crystalline films of Gd2O3 are grown on an atomically flat Ge(001) surface by molecular beam epitaxy and are characterized in situ by reflection high energy electron diffraction and x-ray photoelectron spectroscopy, and ex situ by x-ray diffraction (XRD), atomic force microscopy (AFM), and transmission electron microscopy. The first stage of the growth corresponds to a cubic (110) structure, with two equiprobable, 90 degrees rotated, in-plane domains. Increasing the thickness of the films, a phase transition from cubic (110) to monoclinic (100) oriented crystallites is observed which keeps the in-plane domain rotation, as evidenced by XRD and AFM. (C) 2007 American Institute of Physics.
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