Journal
APPLIED PHYSICS LETTERS
Volume 90, Issue 19, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.2737418
Keywords
-
Categories
Ask authors/readers for more resources
The contact doping profile is controlled in the top-contact configuration to clarify a transistor operation based on a current injection process from the metal contact to the organic channel in a submicron channel pentacene field-effect transistor. The molecular doping in the pentacene film underneath the metal contact, in which a thin layer of iron (III) chloride was introduced, drastically changes transistor characteristics. The doping profile control directly revealed the resistive part for current injection. A model to explain the saturation behavior of the top-contact short channel organic transistor is presented. (C) 2007 American Institute of Physics.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available