Journal
APPLIED PHYSICS LETTERS
Volume 90, Issue 20, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.2740111
Keywords
-
Categories
Ask authors/readers for more resources
This letter reports a 320x256 middle-wavelength infrared focal plane array operating at temperatures up to 200 K based on an InAs quantum dot/InGaAs quantum well/InAlAs barrier detector grown on InP substrate by low pressure metal organic chemical vapor deposition. The device's low dark current density and the persistence of the photocurrent up to room temperature enabled the high temperature imaging. The focal plane array had a peak detection wavelength of 4 mu m, a responsivity of 34 mA/W, a conversion efficiency of 1.1%, and a noise equivalent temperature difference of 344 mK at an operating temperature of 120 K. (C) 2007 American Institute of Physics.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available