Journal
APPLIED PHYSICS LETTERS
Volume 90, Issue 20, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.2740190
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- National Research Foundation of Korea [과C6B2012, 2005-205-D00078] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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This letter presents a reliable and very easy method for selective growth of polarity controlled ZnO films on (0001) Al2O3 substrates by plasma-assisted molecular-beam epitaxy. Cr-compound intermediate layers are used to control the crystal polarity of ZnO films on (0001) Al2O3. ZnO films grown on rocksalt structure CrN/(0001) Al2O3 shows Zn polarity, while those grown on rhombohedral Cr2O3/(0001) Al2O3 shows O polarity. Possible interface atomic arrangements for both heterostructures are proposed. (C) 2007 American Institute of Physics.
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