Journal
APPLIED PHYSICS LETTERS
Volume 90, Issue 21, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.2742790
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The authors report on the fabrication of thin film transistors (TFTs), which use an amorphous indium gallium zinc oxide (a-IGZO) channel, by rf sputtering at room temperature and for which the channel length and width are patterned by photolithography and dry etching. To prevent plasma damage to the active channel, a 100-nm-thick SiOx layer deposited by plasma enhanced chemical vapor deposition was adopted as an etch stopper structure. The a-IGZO TFT (W/L=10 mu m/50 mu m) fabricated on glass exhibited a high field-effect mobility of 35.8 cm(2)/V s, a subthreshold gate swing value of 0.59 V/decade, a thrseshold voltage of 5.9 V, and an I-on/off ratio of 4.9x10(6), which is acceptable for use as the switching transistor of an active-matrix TFT backplane. (c) 2007 American Institute of Physics.
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