Journal
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
Volume 575, Issue 1-2, Pages 78-84Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.nima.2007.01.030
Keywords
chemical bonding; boron carbonitrides; silicon carbonitrides; X-ray fluorescence analysis
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First results are presented for the identification of chemical bonds and structures (speciation) in boron and silicon carbonitrides, produced as layers of some hundred nm. The boron carbonitride (BCxNy) films are synthesized by low-pressure chemical vapor deposition (LPCVD) using the precursor substance trimethylamine borane. The samples of silicon carbonitride (SiCxNy) films are synthesized by plasma-enhanced chemical vapor deposition (PECVD) using hexamethyl disilazane. The measurements were performed by total reflection X-ray fluorescence analysis combined with near-edge X-ray absorption fine structure investigations (TXRF-NEXAFS) and by X-ray photo-electron spectroscopy (XPS). The results are compared with those obtained for standard samples boron carbide (B4C), boron nitride (e.g., h-BN, c-BN), silicon carbide (SiC), and silicon nitride (Si3N4). (C) 2007 Elsevier B.V. All rights reserved.
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