Journal
VACUUM
Volume 81, Issue 9, Pages 1068-1076Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.vacuum.2007.01.061
Keywords
CuO; Cu2O; reactive sputtering; metal mode
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The growth process of CuO and CU2O thin films on MgO(0 0 1) substrates by reactive dc-magnetron sputtering was studied by reflection high-energy electron diffraction (RHEED) and atomic-force microscopy (AFM). The RHEED pattern and AFM image showed that (1) three-dimensional Cu(0 0 1) islands grew on MgO under the nonreactive sputtering condition, (2) CuO(1 1 1) was deposited layer by layer on MgO at 400 degrees C under the reactive sputtering condition, and (3) the film deposited at 600 degrees C in the initial growth stage was composed of three-dimensional Cu islands because O-2 gas could not be incorporated into them due to the low sticking coefficient of 02 on MgO under the reactive sputtering condition. The layer-by-layer CuO(1 1 1) thin-film growth process is discussed from the viewpoint that Cu and oxygen species are supplied in stoichiometry onto the MgO substrate to form CuO thin-film crystals while maintaining minimum interfacial energy between CuO and MgO. (c) 2007 Elsevier Ltd. All rights reserved.
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