Enhanced performance of solution-processed regioregular poly(3-hexylthiophene) thin-film transistors using planar bottom-contact architecture

The authors report on the solution-processed planar bottom-contact (pBC) organic thin-film transistors and contact effect on gate threshold voltage incorporating regioregular poly(3-hexylthiophene) active layer. By employing pBC configuration, the transistors on SiO2/Si without surface modification show much higher mobility, lower threshold voltage, and narrower dispersion of threshold voltage when compared to the conventional bottom-contact counterparts. The high mobility and lower threshold voltage are attributed to an improved contact at the interface between the source/drain electrodes and the poly(3-hexylthiophene) active layer. (C) 2007 American Institute of Physics.