4.6 Article

Room-temperature ferromagnetic and ferroelectric behavior in polycrystalline ZnO-based thin films

Journal

APPLIED PHYSICS LETTERS
Volume 90, Issue 22, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.2745247

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Polycrystalline ZnO-based thin films with Li and/or Co doping have been prepared by a sol-gel spin-coating method on silicon substrates. Magnetization measurements reveal that Li-doped ZnO film shows paramagnetic behavior. However, the Co-doped ZnO thin films show obvious room-temperature ferromagnetic properties, and ferromagnetic properties can be enhanced by the Li codoping, which may be ascribed to indirect exchange via Li-related defects. All ZnO-based films exhibit ferroelectric behavior, and ferroelectric properties can be tuned by the dopants. (C) 2007 American Institute of Physics.

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