Journal
THIN SOLID FILMS
Volume 515, Issue 15, Pages 6068-6072Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2006.12.084
Keywords
solar cell; buffer layer; ILGAR; indium sulfide; zinc sulfide; CIGSSe; CIS; chalcopyrite
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Indium sulfide buffer layers deposited by the spray-ion layer gas reaction (Spray-ILGAR) technique are a viable alternative to the traditional cadmium sulfide buffer layer in thin film solar cells. In the present work we report on the results of manipulating the absorber/buffer interface between the chalcopyrite Cu(In,Ga)(S,Se)(2) absorber (CIGSSe) and the indium sulfide buffer. It is shown that the deposition of a small amount of zinc sulfide at the absorber/buffer interface can be used to increase the open circuit voltage. A small but significant increase of 20 mV (up to 580 mV), as compared to the pure indium sulfide buffered cells is possible leading to an increase in the overall efficiency. (C) 2006 Elsevier B.V All rights reserved.
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