Ambipolar field-effect transistor of high photoluminescent material tetraphenylpyrene (TPPy) single crystal

An ambipolar field-effect transistor (FET) based on a 1,3,6,8-tetraphenylpyrene (TPPy) single crystal, a highly photoluminescent material, has been successfully fabricated. Several kinds of metal electrodes have been employed to investigate the charge injection characteristics into the single-crystal FET. Hole and electron mobilities of 0.34 and 7.7 x 10(-2) cm(2)/(V center dot s) were achieved using Au and Ca electrodes, respectively. The ambipolar characteristic of this device gives a prospect for further development in light-emitting FET operation.