Journal
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
Volume 54, Issue 3, Pages 751-757Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TNS.2007.894211
Keywords
elemental mapping; silicon drift detector; ultrafast x-ray spectrometer; x-ray fluorescence
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This paper introduces an ultra-fast x-ray fluorescence (XRF) spectrometer based on a novel ring-shaped Semiconductor Drift Detector (SDD) and on a novel readout and processing electronics and discusses its performance. The new detector is based on 4 independent droplef' type SDDs monolithically integrated on the same chip. The detector shape optimizes the collection angle of the fluorescence radiation. The x-ray excitation beam is focused on the sample by means of a polycapillary lens through the hole cut in the center of the detector. The droplet type SDD is characterized by a better energy resolution and a better peak-to-valley ratio with respect to the ones of conventional SDDs. The energy resolution is of the order of 140 eV FWHM on the Mn Ka line with 1 mu s shaping time at - 15 degrees C and the peak-to-valley ratio is of the order of 6000. In order to fully exploit the detection rate performance of this detector we have developed a novel read-out electronic unit with selectable shaping time and on-board histogramming capability.
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