Journal
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY
Volume 7, Issue 2, Pages 225-235Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TDMR.2007.901180
Keywords
age function; electron-electron scattering (EES); energy driven; hot carrier; metal-oxide-semiconductor (MOS); multiple vibrational excitation (MVE); reliability; transistor
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In this paper, we confirm that the energy is the driving force of hot-carrier effects. In high-energy long-channel case, the energy-driven paradigm allows to retrieve lucky electron model-like equations although the explanations are different. When the energy is lowered, high-energy electrons generated by electron-electron scattering become the dominant contribution to the degradation. Finally, for even lower energy, multiple vibrational excitation mechanism starts taking the lead.
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