Diffusion of oxygen atom in the topmost layer of the Si(100) surface: Structures and oxidation kinetics

The incorporations and migrations of the atomic oxygen in the topmost layer Si(100)-p(2 x 2) silicon surface, are investigated theoretically using density functional theory. We show that the diffusion is dependent on the starting and the final surrounding environment and does not simply consist in hops from one silicon-silicon bond to another. The activation energies range from 0.11 eV to 2.59 eV. (c) 2007 Elsevier B.V. All rights reserved.