Structural and electrical characteristics of atomic layer deposited high κ HfO2 on GaN

High kappa HfO2 was deposited on n-type GaN (0001) using atomic layer deposition with Hf(NCH3C2H5)(4) and H2O as the precursors. Excellent electrical properties of TiN/HfO2/GaN metal-oxide-semiconductor diode with the oxide thickness of 8.8 nm were obtained, in terms of low electrical leakage current density (similar to 10(-6)A/cm(2) at V-FB+1 V), well behaved capacitance-voltage (C-V) curves having a low interfacial density of states of 2x10(11) cm(-2) eV(-1) at the midgap, and a high dielectric constant of 16.5. C-V curves with clear accumulation and depletion behaviors were shown, along with negligible frequency dispersion and hysteresis with sweeping biasing voltages. The structural properties studied by high-resolution transmission electron microscopy and x-ray reflectivity show an atomically smooth oxide/GaN interface, with an interfacial layer of GaON similar to 1.8 nm thick, as probed using x-ray photoelectron spectroscopy. (c) 2007 American Institute of Physics.