Journal
APPLIED PHYSICS LETTERS
Volume 90, Issue 23, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.2746955
Keywords
-
Categories
Ask authors/readers for more resources
The effects of the roughness of the gate dielectric on the performance of thin film transistors (TFTs) fabricated with poly(2,5-bis(3-hexadecylthiophen-2-yl)thieno[3,2-b] thiophene) (PBTTT-C16) were examined. The field effect mobility of coplanar TFTs made with PBTTT-C16 and plasma-enhanced chemical vapor deposited SiO2/SiNx dielectrics decreased nearly exponentially with surface roughness. Films of PBTTT-C16 have similar crystalline structure on smooth and rough surfaces, but the domain size decreases with increasing roughness. Surface roughness was found to have less of an impact on field effect mobility than the chemical treatment of the dielectric. (c) 2007 American Institute of Physics.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available