Fabrication of thin-film organic transistor on flexible substrate via ultraviolet transfer embossing

Organic field-effect transistors with large-area coverage on flexible plastic substrates are fabricated by ultraviolet transfer embossing printing method. The source and drain electrodes are formed on the plastic substrate with gold by means of transfer embossing. The active layer is spin coated from 5 wt % poly(3-hexylthiophene)-chloroform solution. Poly(4-vinylphenol) is used as the dielectric layer and a thin layer of silver paste is applied to cover the channel area as the gate electrode. The device shows good saturation behavior and gives an on/off ratio of 10(2) and the extracted field-effect mobility of the transistor is 0.0016 cm(2)/V s. (c) 2007 American Institute of Physics.