Electrical characteristics of single and doubly connected Ni silicide nanowire grown by plasma-enhanced chemical vapor deposition

Ni silicide nanowires were grown by plasma-enhanced chemical vapor deposition at 350 degrees C. Transmission electron microscope analysis showed that Ni silicide nanowire has a single crystalline Ni3Si2 structure. The nanowire alignment was controlled by dielectrophoretic method and two nanowires were placed onto Pt electrodes under an ac biasing of 10 Vp-p at 100 kHz. The electric characteristics of the nanowire were obtained from double connection and single connection of 5.07 and 10.44 k Omega, respectively. The resistivity values were obtained to be 183 and 208 mu Omega cm, showing a uniform performance of the connection.